In the paper a new computer program for the silicon Schottky diode structures analysis has been presented. It constitutes a user friendly tool for computer-aided design of the diode structures for a given frequency band. The program makes it possible to compute the most important DC characteristics of the diode, taking into account nonideality of the metal-semiconductor junction, existence of the thin insulating film in the M-S interface and the influence of the geometrical configuration of electrodes on the series resistance of the diode.
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