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Physics based analytical model for charge storage in an ideal heterostructure barrier varactor

机译:理想异质结构屏障变容二极管中电荷存储的基于物理学分析模型

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An ideal Heterostructure Barrier Varactor (HBV) is defined as a device with no leakage current. Space charge storage in the cladding regions with uniformly doped modulation layers and undoped spacers is analyzed using the Thomas-Fermi equilibrium model and Joyce-Dixon approximation. The resulting Q-V characteristics of the cladding regions are given in closed-form parametric expressions, with the electron concentration as the independent variable. C-V characteristics of the HBV is also given parametrically with charge as the device state variable. The calculated C-V characteristics are in excellent agreement with the measured data.
机译:理想的异质结构屏障变弧接片(HBV)定义为没有漏电流的装置。使用Thomas-Fermi均衡模型和Joyce-Dixon近似,分析了具有均匀掺杂调制层和未掺杂的间隔物的覆层区域中的空间电荷存储。由封闭区域的所得到的Q-V特性在闭合形成的参数表达式中给出,电子浓度为独立变量。 HBV的C-V特性也用充电作为设备状态变量给出。计算出的C-V特性与测量数据非常吻合。

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