Fabrication, Testing, and Lumped Element Modeling of Planar Heterostructure Barrier Varactors

摘要

In this paper we present a novel lumped element model of planar InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors (HBVs) on InP substrate. HBVs with 30 and 40 ¹m anode diameters were fabricated as coaxial-type con¯guration to check the wafer quality and extract the intrinsic parameters. Planar HBVs mounted on a coplanar waveguide were fabricated and measured in the 0.5{26.5 GHz frequency range, at di®erent bias points up to 10 V. The measured S-parameters were ¯tted to the proposed equivalent circuit to extract the values of both the parasitic and intrinsic elements. Finally, the extracted equivalent circuit was used to calculate the theoretical tripling e±ciency at 450 GHz attainable with the fabricated HBVs.