Endpoint detection of oxide etch with CO containing C_xF_yH_z che mistry for small open area

摘要

CO emission at around 483.5nm has been commonly used to endpoint oxide etch with C_XF_YH_Z chemistry. The CO emission becomes less sensitive and less reliable as an endpoint signal when CO is added into the etch chemistry, This work sturdied the endpoint of oxide etching on silicide and nitride with CO containing C_XF_YH_Z chemistry. SiF emission at around 440 nm has been identified as the most endpoint sensitive signal for oxide etch stopping on silicon or silicide with CO containing C_XF_YH_Z chemistry.