Morphological Stability in Molecular Beam Epitaxial Growth

摘要

Molecular beam epitaxy has already been treated in other Lectures of this School. Other Lecturers have also already considered instabilities of growth processes. Indeed, growth processes are so full of instabilities that the theorist often wonders how crystals can be grown at all! I will address here a number of situations where instabilities appear, both for homoepitaxial (growth of element A on A) and heteroepitaxial (growth of B on A) deposition.