EVALUATION OF MICROSCOPIC LEAKAGE CURRENT INDUCED BY BULK MICRO DEFECTS

摘要

We have measured the p-n junction leakage current, for different groups of Si substrates. Kink current was found in the Czochralski Si wafer with near-surface micro defects. Compared with the kink current frequency and the micro-defect density measured by the TEM observation, it was clarified that the kink current is locally induced by these defects in the depletion layer. We will introduce a diagnostic method to detect the micro-defect density and discuss the detection limit of the method. Based on the above analysis, we will also discuss the IC failure mode caused by the grown-in defects and the Si crystal properties required for future LSIs.