GATE-CONTROLLED PN JUNCTION LEAKAGE CURRENT FOR WIDE RANGE OF PERIMETER-TO-AREA RATIOS ―AN INCREASE IN THE LEAKAGE CURRENT CAUSED BY DEFECTS RELATED TO OXYGEN PRECIPITATION AND ITS TEMPERATURE DEPENDENCE―

摘要

We investigated a temperature dependence of area component of leakage current for pn junctions fabricated on CZ-Si wafers with different thermal history. To separate area component from the total leakage current gate-controlled pn junction diodes with wide range of perimeter-to-area ratios were studied. Bulk micro defects (BMD) were created inside CZ-Si wafers during prefabrication heat treatments and pn junction fabrication process itself. TEM and Wright etching methods were applied to investigate the size, density and shape of BMDs under the pn junction regions after leakage current measurements. The diffusion component of area leakage current was dominant for the temperature range T>60°C and was strongly affected by the size and density of BMDs. The generation component of area leakage current was proportional to the surface area of oxide precipitates.