Ion Beam Synthesis: A Novel Method of Producing (SiC)_(1-x)(AIN)_x Layers

摘要

Results of a study of the effects of co-implanting N~+ and Al~+ ions into single-crystal SiC at elevated substrate temperatures (200 deg - 800 deg C) to synthesise (SiC)_(1-x)(AlN)_x layers are reported in this paper. The investigation focuses on the relative importance of substrate temperature and sequence of implantation, i.e. the order of species introduced (N + Al or Al + N), as determined by Rutherford backscattering spectrometry in combination with ion channelling (RBS/C) and polarised infrared reflection spectroscopy (PIRR). It has been shown that the use of elevated substrate temperatures (>= 600 deg C) during implantation favours the process of dynamic self-annealing of the host matrix and is viewed as an important prerequisit for maintaining low defect densities in the as-implanted material. Implanting first Al and then N seems to give better results in terms of preserving lattice crystallinity.