Fabrication of nanogapped single-electron transistors for transport studies of individual single-molecule magnets

摘要

Three-terminal single-electron transistor devices utilizing Al/Al_2O_3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets (SMMs). The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductance through a single Mn(12)(3-thiophenecarboxylate) displays the Coulomb blockade effect with several excitations within +-40 meV.