The influence of interface states on the characteristics of HEMT DC output

摘要

The influence of interface states on the characteristics of AlGaAs/GaAs high electron mobility transistor (HEMT) direct curent (DC) output has been quantitatively analyzed in the first time using an analytical model of HEMT DC output. Considering the action of the interface states in AlGaAs/GaAs heterostructure, we have analyzed detailedly the effect of interface states on I-V characteristics and transconductance of HEMT. Our calculated results show that the control capability of the gate voltage on the channel current reduces with increasing the density of interface state, the transconductance of device decreases. Hence, the existence of the interface state degrades the performance of HEMT.