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SEMI-PHYSICAL MODELING OF HEMT DC-TO-HIGH FREQUENCY ELECTROTHERMAL CHARACTERISTICS
SEMI-PHYSICAL MODELING OF HEMT DC-TO-HIGH FREQUENCY ELECTROTHERMAL CHARACTERISTICS
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机译:HEMT直流至高频电热特性的半物理建模
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摘要
A method for modeling semiconductors which utilizes a semiphysical device model (figure 45) coupled with an analytical thermal resistance model to self consistently solve for the channel temperature and internal charge/electric field structure of the semiconductor device.
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