Crystalline structure of II-VI compounds in the region of wurtzite-zinc blende transition

摘要

Optical reflection and exciton photolumineascence at T chemical bounds 2-100 K of CdSe films (1-5 mu m) grown by MOCVD on bulk (0001) CdS at 375-500 C substrate temperaturs have been studied. High growing temperatures (>475 C) produce high quality films with perfect hexagonal wurtzite structure whereas the "cold" substrates (375 C) stabilize perfect cublic zinc blends structure. Besides of that, the mixed phases of disordered polytypes or structures with stacking faults can be grown. These conclusions are confirmed by the study of 2 theta angular profiles of (0002) X-Ray reflexes.