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SILICON NITRIDE AT VERY HIGH TEMPERATURES: BUBBLE AND PIT FORMATION

机译:在非常高的温度下的氮化硅:泡沫和坑形成

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From oxidation studies of sintered ceramics and pure Si_3N_4 and phase equilibrium studies it is concluded that the bubble formation in scales and the bloating of powder compacts have a common cause. This common cause is thought to be the formation of ,,native oxides", which are metastable amorphous solids of the type SiN_xO_y. As the eutectic temperature of the system is approached they recrystallise or decompose. The latter case leads to the bubbling/bloating. In pure Si_3N_4 this is in the vicinity of 1600 deg C at atmospheric pressure and defines the upper HT-limit of use. Pit formation seems to require bubble formation but not vice versa. Pits probably form at surface defects. They interact with microcracks forming during mechanical loading in oxidising atmospheres at high temperatures.
机译:从烧结陶瓷的氧化研究和纯Si_3N_4和相平衡研究的结论是,鳞片中的气泡形成和粉末块的腹胀具有常见的原因。这种常见的原因被认为是形成的,本地氧化物的形成,其是SIN_XO_Y的亚稳态的无定形固体。随着系统的共介温度接近它们重结晶或分解。后一种情况导致鼓泡/膨胀。在纯SI_3N_4中,这是在大气压下的1600℃附近,并定义了使用的上海限度。坑形成似乎需要气泡形成,但不反之亦然。凹坑可能在表面缺陷形成。它们与微裂纹形成在高温下氧化环境中的机械负载。

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