Transition From Tunneling to Poole-Frenkel Type Transport in ALuminum-Nitride

摘要

Aluminum nitride films; prespared by reacitive sputterihg, with thicknesses between 20 and 2 mum, were tested for different transport models. Perpendicular I-V characteristics showed tuneling behaviour for nominal thicknesses below 30 A. The curves changes to activated behaviour in thicker samples indicating poole-Frenkel type transport with reemission of charge fro mdeep defects. Their presence could be confimed indirectly in thicker films by taking optical absorption spectra nad by C-V measurements which were performed on MIS structures with p-type silicon as the substrate.