Determaination of Stoichimetry and Oxygen content in platelikd and Octaheadral oxygen precipitates in silicon with FT-IR Spectroscopy

摘要

P-and n-type Si wafers with interstitial oxygne concentratios in the range of (9-11)*10 sup 17 cm sup -3 were subjected to different thermal treatments. FT-IR measurements were performed at 300 K and 6K. The absorption spectra of octahedral and platelet precipitates can be reconstructed well be the theory of absorption of light by small particles. An empirical relatioship is deduced to determine the concentraion of oxygen in both types of precipitates, with an estimated accurcy of 15