Effect of impurity potential range on a scaling behavior in the quantum Hall regime

摘要

Qualitatively different temperature dependences of quantum Hall transition width are observed for heterostructures with short-range (InGaAs/GaAs) or smooth (Ge/GeSi) impurity potentials. As the real scaling behavior, with critical exponent close to the theoretical value, has been observed at the former, the semiclassical in nature dependences takes place at the latter, in accordance with available theoretical considerations.