Single crystalline 6H-SiC near (0001 )-oriented p-type samples were co-implanted at 550 °C with Fe ions at different energies and fluences ranging from 30 to 160 keV and from 2 × 10~(15) to 8 × 10~(15) ions cm~(-2) with the aim to get so-called diluted magnetic semiconductors (DMS). Different treatments for implantation-induced damage recovery and iron incorporation and activation in the SiC matrix have been studied: the effects of rapid thermal annealing (RTA) on microstructure and magnetic properties of Fe-implanted 6H-SiC are compared to those of laser processing in the solid phase.
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