Some features of a microdefect revealing in single-crystal silicon by the preferential etching technique

摘要

Poorly known features of a microdefect (MD) delineation in dislocation-free single-crystal silicon by the defect-contrast (DC) etching technique were studied experimentally using DC-solutions of the HF-CrO_3-H_2O and HF-K_2Cr_2O_7-H_2O systems. The dependences of shape and size of an individual MD-trace on the etchant type, etch time (etch depth), and microdefect type have been demonstrated. Taking into account of these dependences allows one to improve selectivity and sensitivity of the technique. Compositions of the most effective DC-etchants were noted.