Impurity photoconductivity in strained p-InGaAs/GaAsP heterostructures

摘要

The spectrum of far-infrared photoconductivity resulted from excitation of shallow acceptors in strained quantum well of solid solution InGaAs has been observed for the first time. Energies of shallow acceptor levels including resonant ones in strained InGaAs/GaAsP quantum well heterostructure have been calculated. Calculated energies of optical transitions between ground and excited acceptors states are shown to be in good agreement with those observed in the photoconductivity spectrum.