Control of impurity diffusion in silicon by IR laser excitation

摘要

We report a first-time attempt of diffusion control of impurities by IR excitation, by using an intensive synchrotron radiation facility, BL43IR of Spring-8. Although the result is discouraging, the plan, experimental setup, irradiation experiment, and the result on the impurity diffusion, are described in detail, in hoping improvement of experiment in the future. It is suggested that the input power employed in the present experiment is not enough to observe the intended results.