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Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO

机译:ZnO中离子注入Mn / Fe缺损复合物形成的温度和剂量依赖性

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~(57)Fe Moessbauer spectroscopy following ion implantation of radioactive ~(57)Mn~+ ( T_(1/2) = 85.4 s) has been applied to study the formation of Fe/Mn implantation-induced defects in ZnO at temperatures between 319 and 390 K. The formation of ferric iron-vacancy complexes is found to depend strongly on the implanted dose and to be faster and more efficient at higher temperatures. The results at these temperatures suggest the mobility of the Zn vacancy, together with vacancy trapping at the substitutional Mn/Fe impurities are responsible for the formation of Fe-V_(Zn) complexes.
机译:〜(57)Fe Moessbauer光谱后,放射性〜(57)Mn〜+(T_(1/2)= 85.4秒的离子注入,以研究在ZnO之间形成Fe / Mn植入诱导的缺陷在温度下319和390 K.发现熨烫铁空位复合物的形成强烈依赖于植入剂量,并在较高温度下更快且更效率更高。这些温度的结果表明Zn空位的迁移率,在取代Mn / Fe杂质上的空位捕集在一起负责形成Fe-V_(Zn)配合物。

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