High current and transconductance AlGaN/GaN MODFETs at elevated temperatures

摘要

The high electron peak and saturation velocity and a large breakdown field attributes of GaN combined with its good thermal conductivity and stability make it a suitable material for electrical devices intended for high power applications. The wide band gap of GaN leads to low intrinsic carrier concentration enabling a more precise control of free carrier concentration over a wide range of temperatures. In this paper we present AIGaN/GaN double heterostructure channel MODFET exhibiting record dc performance at room and elevated temperatures.