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Growth and characterization of (110) oriented YBa_2Cu_3O_x superconducting thin films

机译:(110)取向YBA_2CU_3O_X超导薄膜的生长和表征

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High T_c superconducting thin films with high in-plane electrical anisotropy are currently of interest for practical structures such as microbridges and vortex flow devices. We present laser ablation growth conditions and electrical characterization (R(T), J_c, T_c etc) for (110) oriented YBCO thin films grown on a PBCO template layer on (110) oriented SrTiO_3 substrates. Films are grown to a maximum thickness of 200nm and are crack free. The bestfilms have an aft-plane resistivity of 150 μΩcm with T_c midpoint of 89K and T_c width of 3K. The anisotropy in the normal state in-plane resistivity at 100K may be varied up to the idear value of 1:100 by varying the processing conditions. We present I-V measurements taken over a range of temperatures and magnetic fields, and in particular note that the anisotropy in J_c in the low temperature limit is far less than the normal state anisotropy.
机译:具有高面内电各向异性的高T_C超导薄膜目前是用于微磁和涡流装置的实际结构感兴趣。我们在PBCO模板层上生长的(110)定向的SRTIO_3基板上生长的(110)导向的YBCO薄膜(110)呈现激光消融生长条件和电学表征(R(t),J_C,T_C等)。薄膜生长至最大厚度为200nm,并且不含裂缝。 Bestfilms的底部电阻率为150μmcm,T_c中点为89k和t_c宽度为3k。通过改变加工条件,可以在100K处的正常状态接口电阻率的各向异性在100K时变化为1:100的Idear值。我们介绍了一系列温度和磁场的I-V测量,特别注意,低温限制的J_C中的各向异性远小于正常状态各向异性。

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