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Extreme Ultraviolet Radiation from Z-pinch Plasmas for Next Generation Lithography

机译:从Z-PINCH等离子体进行下一代光刻的极端紫外线辐射

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Development of the high power EUV (extreme ultraviolet) source has been expected as a light source for the next generation lithography. There are two kinds of EUV sources: the discharge produced plasma (DPP) and the laser produced plasma (LPP). The DPP method is considered to be promising in easiness of radiating the high power EUV and in the cheapness of constructing the EUV source. The Z-pinch plasmas driven by pulsed power have been used mainly in the DPP method. Here, the research results of the DPP method at Kumamoto University are summarized.
机译:高功率EUV(极端紫外线)源的开发已预期为下一代光刻的光源。 EUV源有两种:放电产生的等离子体(DPP)和激光产生的等离子体(LPP)。 DPP方法被认为是易于辐射高功率EUV和构建EUV源的廉价的容易性。由脉冲功率驱动的Z-PINCH等离子体主要用于DPP方法。在这里,综述了熊本大学DPP方法的研究结果。

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