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Extreme Ultraviolet Radiation from Z-pinch Plasmas for Next Generation Lithography

机译:Z夹层等离子体产生的极端紫外线可用于下一代光刻

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摘要

Development of the high power EUV (extreme ultraviolet) source has been expected as a light source for the next generation lithography. There are two kinds of EUV sources: the discharge produced plasma (DPP) and the laser produced plasma (LPP). The DPP method is considered to be promising in easiness of radiating the high power EUV and in the cheapness of constructing the EUV source. The Z-pinch plasmas driven by pulsed power have been used mainly in the DPP method. Here, the research results of the DPP method at Kumamoto University are summarized.
机译:期望开发高功率EUV(极紫外)光源作为下一代光刻的光源。 EUV源有两种:放电产生的等离子体(DPP)和激光产生的等离子体(LPP)。 DPP方法被认为在辐射大功率EUV的容易性和构造EUV源的廉价方面是有前途的。由脉冲功率驱动的Z捏等离子体主要用于DPP方法。这里,对熊本大学的DPP方法的研究结果进行了总结。

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