27 GHz bandwidth high speed monolithic integrated optoelectronic photoreceiver consisting of a waveguide fed photodiode and an InAlAs/InGaAs-HFET-traveling wave amplifier

摘要

An InP-based monolithic integrated photoreceiver with a bandwidth of 27 GHz is presented. The device consists of a waveguide fed pin-photodiode and a traveling wave amplifier with coplanar waveguides based on four InAlAs/InGaAs/InP-HFET. The integration concept, receiver design, fabrication process and characterization are shown. The presented concept offers a potential for bit rates in the 100 Gb/s range.