Soft error immune LT GaAs ICs

摘要

Implementation of a low temperature grown GaAs (LT GaAs) buffer layer beneath the complementary heterostructure field effect transistor (CHFET) GaAs integrated circuit (IC) process is shown to eliminate soft error susceptibility. With soft errors reduced by over 8 orders of magnitude, the CHFET digital GaAs technology can provide the highest overall radiation immunity for any GaAs or silicon FET-based technology.