Low current wideband amplifier using 0.2 /spl mu/m gate MODFET fabricated by using phase-shift lithography

摘要

We have developed wideband amplifier that can keep over 10 dB gain at the drain voltage/current of 2 V/10 mA in the frequency range from 100 MHz to 3 GHz. The fabricated IC achieved low noise figure and high IP3 (output) of 1.4 dB and 30 dBm at 800 MHz, respectively. The present IC employs 0.2 /spl mu/m gate delta-doped MODFET structure fabricated by using phase-shift lithography.