Dosage effects on oxygen implanted single-bonded 1.3 /spl mu/m vertical-cavity surface-emitting lasers

摘要

1.3 /spl mu/m vertical-cavity surface-emitting lasers (VCSELs) will have important applications in local access optical networks and high-speed data links. In our earlier paper, we reported low CW threshold current 1.3 /spl mu/m VCSELs which contain InGaAlAs strain-compensated quantum wells, bonded GaAs/AlGaAs Bragg mirrors, and oxygen implanted current confinement regions. It is believed that oxygen implantation is the key for low threshold current because oxygen atoms have less lateral and vertical straggling than hydrogen atoms and the implanted region can preserve its high resistivity after high temperature wafer-bonding. In this paper we report our studies of the oxygen dosage effects on 1.3 /spl mu/m VCSELs. We have measured the threshold current, slope efficiency, and series resistance for VCSELs with two different oxygen doses but otherwise the same structure.