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Observing morphology on surface of poly(methacrylate) in ArF lithography using AFM phase image

机译:AFM相位图像在ARF光刻中聚(甲基丙烯酸酯)表面的形态

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In recent years, ArF lithography has required a half-pitch size (DRAM) of 45 nm or less. To achieve the requirement, line edge roughness (LER) is recognized as one of the most serious problems in lithography today, because LER directly degrades device characteristics and affects system performances. Although the uniformity of polymer film is important for reducing LER, little is known about polymer morphology after coating. In this study, we observed the surface of poly(methacrylate) samples after coating with AFM tapping mode and found specific morphology in the phase images for the first time (the height image was flat).
机译:近年来,ARF光刻需要45nm或更小的半间距尺寸(DRAM)。 为了实现要求,线边缘粗糙度(LER)被认为是今天的光刻中最严重的问题之一,因为LER直接降低了设备特性并影响系统性能。 虽然聚合物膜的均匀性对于还原LER是重要的,但是关于涂布后的聚合物形态的少量是众所周知的。 在这项研究中,我们在用AFM攻丝模式涂覆后观察到聚(甲基丙烯酸酯)样品的表面,并且首次在相位图像中发现了特定的形态(高度图像是平坦的)。

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