Determination of critical process steps for enhanced yield improvement

摘要

This paper presents a new method to isolate process steps causing performance spread of analogue or digital circuits. It is based on the analysis of process control or device parameters, sampled over one or more wafers of one or more lots. The analysis includes a physical approach of the parameters combined with a correlation coefficient study. This methodology which links parameters to process quantities, results in short-loop processing as well as in enhanced yield improvement.