A BIST scheme for high-speed Gain Cell eDRAM

摘要

A built-in self-test (BIST) scheme is presented for at-speed test of the novel Gain Cell-based embedded DRAM which can operate at the high frequency of 200MHz. This BIST implementation consists of instruction set architecture (ISA) and hardware. A 4-stage pipeline for instruction execution makes at-speed test possible. Various kinds of tests, including single-address test, traversal test and refresh test, can be performed by executing different instruction combinations. An 8KB Gain Cell memory with the BIST is fabricated in 0.13µm CMOS technology. Silicon measurement on ATE shows that the BIST can perform at-speed test and measurement types mentioned above.