Effect of polyvalent elements impurities on the value of bulk laser damage threshold and UV absorption of KDP single crystals

摘要

This paper is devoted to studying the influence of Ca, Si, Pb, and Cr impurities (possessing no absorption bands at the wavelength of acting laser irradiation) on the value of bulk laser damage threshold and UV absorption in KDP single crystals. It is shown that for the investigated concentration range (1 $DIV 10$+$MIN@5$/ 1 $DIV 10$+$MIN@2 mass%) laser damage threshold essentially decreases with raising the concentration of impurity ions in the crystal lattice. The maximal value of the said characteristic (approximately 40 J/cm$+2$/) is found to be achieved in the case when the concentration of impurities is not less than 1 $DIV 10$+$MIN@5$/ mass%.