Current Collapse Reduction Technique Using N-Doped Buffer Layer into the Bulk Region of a Gate Injection Transistor

摘要

GaN based transistors are subjected to current collapse. In this work a unique solution to this issue is presented by using a buried n-type doped region in the bulk region below the 2DEG channel. The proposed structure is named as "Buried n-doped Gate Injection Transistor (BNGIT)". TCAD simulation of the structure shows that this added layer increases the electron density in the channel just above it. Hence the loss of electrons due to traps can be compensated which results in current collapse free operation.