GaInAsP/InP multiple-reflector micro-cavity structure fabricated by EB lithography and selective etching

摘要

A very uniform multiple-reflector micro-cavity structure was fabricated by electron beam (EB) lithography and selective wet chemical etching. Very small standard deviation of the gap width between micro-cavities, which was only 22 nm for the average value of 762 nm, enabled us to observe a clear modulation in PL spectrum due to multiple reflection.