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High-gain GaAs photoconductive semiconductor switches for impulse sources

机译:用于脉冲源的高增益GaAS光电导体开关

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A high peak power impulse pulser that is controlled with high gain, optically triggered GaAs Photoconductive Semiconductor Switches (PCSS) has been constructed and tested. The system has a short 50 approximately ega line that is charged to 100 kV and discharged through the switch when the switch is triggered with as little as 90 nJ of laser energy. We have demonstrated that the GaAs switches can be used to produce either a monocycle or a monopulse with a period or total duration of about 3 ns. For the monopulse, the voltage switched was above 100 kV, producing a peak power of about 48 MW to the 30 approximately ega load at a burst repetition rate of 1 kHz. The laser that is used is a small laser diode array whose output is delivered through a fiber to the switch. The current in the system has rise times of 430 ps and a pulse width of 1.4 ns when two laser diode arrays are used to trigger the switch. The small trigger energy and switch jitter are due to a high gain switching mechanism in GaAs.
机译:通过高增益控制的高峰功率脉冲脉冲器,已经构建和测试了光学触发的GaAs光电导半导体开关(PCS)。该系统具有短的50大约为EGA线,当开关触发时,电荷为100kV并通过开关放电,直到激光能量短至90 NJ。我们已经证明,GaAs开关可用于产生单核或单循环的周期或全持续时间为约3ns。对于单个脉冲,电压开关高于100kV,以1kHz的突发重复率,产生约48mW的峰值功率为约48mW。使用的激光器是一个小激光二极管阵列,其输出通过光纤传递到开关。当两个激光二极管阵列用于触发开关时,系统中的电流具有430ps的上升时间和1.4 ns的脉冲宽度。小触发能量和开关抖动是由于GaAs中的高增益切换机制。

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