A New Method for the Determination of Localized-State Distribution in Amorphous Semiconductors from Transient Photoconductivity

摘要

A method has been proposed for the determination of localized-state distributions in amorphous semiconductors from transient photoconductivity using Laplace transforms. The method is applicable to both pre- and post-recombination regimes of transient photoconductivity, and to amorphous semiconductors exhibiting either non-dispersive or dispersive transport. The applicability of the method is demonstrated in hydrogenated amorphous silicon.