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Influence of deposition parameters on the biaxial alignment of YSZ buffer layers using an unbalanced magnetron

机译:沉积参数对YSZ缓冲层使用不平衡的磁控管双轴对准的影响

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The development of a cost-effective deposition technique for depositing biaxially aligned buffer layers on poly-crystalline and amorphous substrates would be a significant progress in developing YBa_2CuO_(7-x) coated conductor. With this goal, biaxially aligned thin films of yttria stabilised zirconia (YSZ) have been deposited on several amorphous and polycrystalline substrates using a specifically modified sputter magnetron. The use of this unbalanced magnetron to deposit YSZ on tilted substrates resulted in highly textured layers on glass, metal and polymer substrates, the best in-plane full width at half maximum being 13°in a layer deposited at 43.3 nm/min. The same technique was also demonstrated on a moving metal tape, however with worse results. For the scaling up of this quite simple technique, a higher efficiency, an even higher deposition speed and no degradation of in-plane texture when depositing on moving substrates has to be established. Therefore some more fundamental aspects of the process were investigated.
机译:用于在聚结晶和非晶基底上沉积双轴对准缓冲层的经济有效沉积技术的发展将是显影YBA_2CuO_(7-X)涂覆的导体的显着进展。通过这种目标,使用特异性修饰的溅射磁控管沉积在几种无定形和多晶基板上的双轴对准薄膜溶液。使用这种不平衡磁控管在倾斜的基板上沉积YSZ,导致玻璃,金属和聚合物基板上的高度纹理层,在沉积在43.3nm / min的层中,在半最大的最大面内全宽度为13°。在移动的金属带上还证明了相同的技术,但结果更差。为了缩放这种相当简单的技术,在必须建立在沉积在移动基板上时,更高的效率,甚至更高的沉积速度,并且没有面内纹理的劣化。因此,研究了该过程的一些更基本的方面。

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