A model for reverse short-channel effects in MOSFETs

摘要

A model for reverse short-channel effects of the threshold voltage is presented by adding two separate n-regions around the source and drain regions of a p-channel MOSFET. Two-dimensional simulations with MEDICI of this modified p-channel MOSFET verifies this model. Experimental evidence of the reverse short-channel effects is also found. The errors inherent to the method for extracting the threshold voltage are shown not to be responsible for the reverse short-channel effects.