0.98 /spl mu/m InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

机译：0.98 / SPL MU / M INGAAS / INGAP应变量子井激光器与GAAs / INGAP超晶格光学限制层

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Improvement of internal quantum efficiency and threshold current density was demonstrated by introducing GaAs/InGaP superlattice optical confinement layer (SL-OCL) into InGaAs/InGaP strained QW lasers. Carrier confinement due to the multiple quantum barrier (MQB) effect in addition to the graded index effect in the SL-OCL was also discussed.

机译：通过将GaAs / InGaP超晶格光学限制层（SL-OCL）引入InGaAs / InGaP应变QW激光器来证明内部量子效率和阈值电流密度的提高。还讨论了由于多量子屏障（MQB）效应而引起的载波限制也讨论了SL-OCL中的分级指数效应。

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《IEEE International Semiconductor Laser Conference》|1994年||共2页
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Usami M.; Matsushima Y.; Institute of Electric and Electronic Engineer;
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中图分类自动化技术、计算机技术;
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专利

1. 0.98-/spl mu/m InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer [J] . Usami M., Matsushima Y. IEEE journal of selected topics in quantum electronics . 1995,第2期

机译：具有GaAs-InGaP超晶格光学限制层的0.98- / spl mu / m InGaAs-InGaP应变量子阱激光器
2. High-power highly-reliable operation of 0.98-/spl mu/m InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers [J] . Sagawa M., Toyonaka T. IEEE journal of selected topics in quantum electronics . 1995,第2期

机译：具有拉伸应变InGaAsP势垒的0.98- / splμm/ m InGaAs-InGaP应变补偿单量子阱激光器的高功率高可靠操作
3. Advantages of InGaAsP separate confinement layer in 0.98 mu m InGaAs/GaAs/InGaP strained DOW lasers for high power operation at high temperature [J] . Sagawa M., Hiramoto K. Electronics Letters . 1992,第17期

机译：0.98μmInGaAs / GaAs / InGaP应变DOW激光器中InGaAsP隔离限制层的优势，可在高温下进行大功率操作
4. 0.98 /spl mu/m InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer [C] . Usami, M., Matsushima, . 1994

机译：0.98 / spl mu / m带有GaAs / InGaP超晶格光学限制层的InGaAs / InGaP应变量子阱激光器
5. Fabrication of high power aluminum: Free 0.8 micron to 1.0 micron InGaAsP/InGaP/GaAs lasers for optical pumping [D] . Diaz, Jacqueline Estela 1997

机译：高功率铝的制造：用于光学泵浦的0.8微米至1.0微米的InGaAsP / InGaP / GaAs激光器
6. Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy [O] . Marcin Kurka, Michał Rygała, Grzegorz Sęk, 2020

机译：通过采用光学光谱分程利用基于INP的量子级联激光器的InGaAs层的非接触式测量
7. Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells [O] . G. W. Shu, J. Y. Lin, H. T. Jian, 2012

机译：从Ingaas Subcell到Ingap / Ingaas / GE多结太阳能电池的Ingap Subcell的光学耦合
8. Low-Threshold InGaAs Strained-Layer Quantum-Well Lasers (Lambda=0.98 Micrometer)with GaInP Cladding Layers and Mass-Transported Buried Heterostructure [R] . Liau, Z. L., Palmateer, S. C., Groves, S. H., 1992

机译：具有GaInp包层和质量传输埋层异质结构的低阈值InGaas应变层量子阱激光器（λ= 0.98微米）

0.98 /spl mu/m InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

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