Growth of low-temperature cubic SiC on tilted and non-tilted (100)Si with 60 V breakdown Schottky barriers

摘要

The growth properties of cubic SiC on (100) Si grown at temperatures of 700 to 1100°C, using a single precursor (methylsilane), were investigated. An optimun growth window was found at 800°C and a "two-step growth" technique was utilized to improve the crystalline quality of high temperature growth. Simple Pt-Schottky barriers fabricated on n-type SiC on Si exhibited a "hard" reverse breakdown with a record high breakdown voltage of 60 V.