Deposition of highly resistive, undoped and p-type, magnesium-doped gallium nitride films by modified gas source molecular beam epitaxy

摘要

Gas-source molecular beam epitaxy (GSMBE) has allowed the direct deposition of undoped, resistive(＞10~2 Ω.cm) and Mg-containing, p-type (0.3 Ω.cm) GaN films on AlN buffer layers without post deposition processing. Carrier concentration and mobility values to 10~(18) cm~(-3) and 10 cm~2/V.s, respectively, were obtained. In addition, a GaN p-n junction has successfully been deposited using this technique.