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Electroluminescence properties of bipolar resonant tunneling diode

机译:双极谐振隧道二极管的电致发光性能

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An electroluminescence model of bipolar resonant tunneling diode is carried out. The current is the sum of electron and hole current. The electron and hole density at resonant level of quantum well are related with the electron and hole current respectively. Radiative recombination rate formula is derived from matrix element, electrons and holes distribution. Result shows the large on-off ratio of light output can be achieved by the bipolar resonant tunneling diode.
机译:进行双极谐振隧道二极管的电致发光模型。电流是电子和孔电流的总和。谐振水平的电子和孔密度分别与电子和孔电流相关。辐射重组率公式衍生自基质元件,电子和孔分布。结果表明,通过双极谐振隧道二极管可以实现光输出的大的开关比。

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