Subthreshold analysis of floating-gate MOSFET's

摘要

An analytical model for subthreshold operation of floating-gate MOSFETs is presented. The authors; first-order analysis shows exponential dependence between the current and drain-to-substrate and source-to-substrate voltages; this is confirmed by experimental data. A small-signal model is presented for the common source configuration. Methods for adjusting the charge on the floating gate are also discussed.