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The coupling of an N-well CMOS fabrication laboratory course with the SEMATECH Center of Excellence in Multilevel Metallization at Rensselaer

机译:N-Well CMOS制造实验室课程与rensselaer多级金属化卓越卓越卓越素材的耦合

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The Center for Integrated Electronics (CIE) at Rensselaer Polytechnic Institute is utilizing front-end processing, developed for, and performed in, a CMOS fabrication laboratory course as a foundry service for back-end of the line search. The goal of the fabrication laboratory course is to expose students to the fabrication of 2-micron CMOS integrated circuits through first level metallization and electrical testing. The SEMATECH Center of Excellence (SCOE) on Multilevel Metallization at Rensselaer is primarily focused on back-end of the line unit process research and has added an important task on process integration. The mask design and process steps used for both the course and SCOE research are outlined.
机译:Rensselaer理工学院的集成电子学中心(CIE)正在利用CMOS制造实验室课程的前端处理,开发,作为铸造服务的铸造服务,以便进行线路搜索的后端。制造实验室课程的目标是通过第一级金属化和电气测试将学生促使学生用2微米CMOS集成电路的制造。在Renselaer的多级金属化上的SemaTech卓越中心(Scoe)主要集中在线单元流程研究的后端,并在流程集成上增加了一项重要任务。概述了用于课程和SCOE研究的掩模设计和工艺步骤。

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