In view of the improving switching performance of GTO thyristors, a four electrode device-cathode, anode, two gates-has been developed and investigated. The structure specific features include: all planar technology; finely interdigitated cathode (40 or 100 micron finger widths); anode gate available on anode side (same pattern as gate cathode side one); vertical profile-asymmetric or symmetric; and switching capability 80 A, 1000 V. It has shown an improvement of at least a factor 2 in terms of switch-off loss. A brief process description is given and the complete circuit equipment described. Experimental results are presented and discussed.
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