首页> 外文OA文献 >Switching Characteristics of an Asymmetrical Complementary 4H-SiC Gate TurnOff (GTO) Thyristor

【2h】

Switching Characteristics of an Asymmetrical Complementary 4H-SiC Gate TurnOff (GTO) Thyristor

机译：非对称互补4H-SiC栅极截止（GTO）晶闸管的开关特性

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
John Mookken Robert; Robert Lewis; Jerry L. Hudgins A. Agarwal; J. B. Casady; S. Siergiej;
展开▼
作者单位

展开▼
年度 2007
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. 700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's) [J] . Agarwal A.K., Casady J.B. IEEE Electron Device Letters . 1997,第11期

机译：700V非对称4H-SiC栅极关断晶闸管（GTO）
2. Effects of Neutron Irradiation on the Static and Switching Characteristics of High-Voltage 4H-SiC p-type Gate Turn-off Thyristors [J] . Peng Dong, Yingxin Cui, Zhe Chen, IEEE Transactions on Electron Devices . 2019,第9期

机译：中子辐照对高压4H-SiC p型栅极截止晶闸管的静态和开关特性的影响
3. 4H-SiC p-n diodes and gate turnoff thyristors for high- power, high-temperature applications [J] . Anant K. Agarwal, Suresh Seshadri, Michael MacMillan Solid-State Electronics . 2000,第2期

机译：适用于大功率高温应用的4H-SiC p-n二极管和栅极关断晶闸管
4. Switching characteristics of an asymmetrical complementary 4H-SiC gate turn-off (GTO) thyristor [C] . Mookken, J., Lewis, Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE . 1997

机译：非对称互补4H-SiC栅极关断（GTO）晶闸管的开关特性
5. The MOS-gated emitter switched thyristor (EST). [D] . Mallikarjunaswamy, Shekar Soma. 1993

机译：MOS门控发射极开关晶闸管（EST）。
6. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics [O] . Jaeyeop Na, Jinhee Cheon, Kwangsoo Kim 2021

机译：4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
7. Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications [O] . Hojun Lee, Ogyun Seok, Taeeun Kim, 2020

机译：用于电源切换应用的N +基板上的4H-SiC晶闸管的栅极电流和旋转键
8. Application Manual for 200-Ampere Gate Turnoff Thyristor (GTO) or Gate Controlled Switch (GCS). [R] . bushman, r. n. golden, f. b. 1975

机译：200安培栅极关断晶闸管（GTO）或门控开关（GCs）应用手册。

Switching Characteristics of an Asymmetrical Complementary 4H-SiC Gate TurnOff (GTO) Thyristor

著录项

引文网络

相似文献

相关主题

期刊订阅