Optimal design of power bipolar transistor

摘要

The influence of geometrical dimensions on the electrical parameters of the bipolar power transistor is presented. The dimensions of emitter and base fingers have been changed in order to obtain (for the given silicon surface area) optimal performance of the device. The simulations of the typical switching circuit with application of a 2-dimensional physical transistor model were performed. The two-dimensional semiconductor device simulator PASS has been used in the computation. The various physical effects important in the case of power devices were taken into account. The power losses during commutation were compared for various structures in order to choose the optimal one.