Fabrication and lasing characteristics of prototype MOCVD-grown GaAs/AlGaAs/AlAs distributed-feedback resonant-periodic-gain surface-emitting lasers are reported. The new structure eliminates the need for end reflectors in earlier resonant- periodic-gain lasers, thereby reducing considerably the total thickness of the device. A new hybrid distributed-Bragg- reflector/distributed-feedback resonant-periodic-gain structure, compatible with the transverse junction electrical pumping scheme, is also proposed.
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