Optical properties of InP/GaAs/InP strained layers

摘要

Single layers of GaAs strained to InP have been grown by reduced pressure metal-organic vapor phase epitaxy. Raman spectroscopy along with cathodoluminescence show that the layers are fully strained and consisting of GaAs. The photoluminescence is strong, allowing detailed hydrostatic pressure experiments to be performed. These structures, which are type II at atmospheric pressure, have been transformed to type I structures at high hydrostatic pressure, where the GaAs layer has an indirect conduction band. This transformation is seen as a change in the pressure derivative of the transition energy and a rapid disappearance of the luminescence intensity. We find that the pressure derivative of the valence band offset is less than 1 meV/kbar.